Low temperature Cu-Cu thermo-compression bonding for advanced micro-system packaging

Authors

  • M. Prardhan Yogya Karunya Institute of Technology and Sciences, Coimbatore, India
  • Megha Agrawal Central Manufacturing Technology Institute, Bangalore, India

Keywords:

MEMS, Thermo Compression Bonding, Pre Chemical Treatment, 3D IC Integration

Abstract

Low-temperature wafer-level Copper (Cu)-Copper (Cu) thermo-compression bonding has been an attractive choice in terms of its compatibility for microelectronics metallization and its lower cost. To achieve Low temperature Cu-Cu thermo compression bonding, copper oxide should be removed on the surface of the metal. In this paper, the effectiveness of the acetic acid pretreatment for removal of copper oxide before bonding is analysed. The thermo compression bonding is carried out at 2500C for 1 hr followed by 30 min annealing. Further to find the quality of bonding, different characterization techniques are carried out such as dicing of wafers, bond strength test, and SEM analysis.

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Published

01-09-2020

How to Cite

Yogya, M. P., & Agrawal, M. (2020). Low temperature Cu-Cu thermo-compression bonding for advanced micro-system packaging. Manufacturing Technology Today, 19(9), 46–50. Retrieved from https://mtt.cmti.res.in/index.php/journal/article/view/127

Issue

Vol. 19 No. 9 (2020): September 2020

Section

Articles

License

All the articles published in Manufacturing Technology Today (MTT) Journal are held by the Publisher. Central Manufacturing Technology Institute (CMTI) as a publisher requires its authors to transfer the copyright prior to publication. This will permit CMTI to reproduce, publish, distribute, and archive the article in print and electronic form and also to defend against any improper use of the article.