Low temperature anodic bonding process with silicon-gold-glass interface for wafer level packaging applications

Authors

  • P. Ravi Teja Naidu MEMS Fabrication Division, Department of Space, Semi-Conductor Laboratory, Mohali, India
  • Vijay Kumar MEMS Fabrication Division, Department of Space, Semi-Conductor Laboratory, Mohali, India
  • Jaspreet Singh MEMS Fabrication Division, Department of Space, Semi-Conductor Laboratory, Mohali, India

Keywords:

Die Shear, Stud Pull, Anodic Bond, Ohmic Contact

Abstract

In this paper, anodic bonding technique at low temperatures with Si-Au-Glass interface has been demonstrated. Also, the techniques to overcome the challenges like gold diffusion/spreading and non-ohmic contacts has been demonstrated.The bond strengths of the anodic bond process is verified through die shear and stud pull tests and observed a good quality bond strength which is better than 10 times in die shear test and 20 times in stud pull test when compared with MIL-Standards.

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Published

01-10-2020

How to Cite

Naidu, P. R. T., Vijay Kumar, & Singh, J. (2020). Low temperature anodic bonding process with silicon-gold-glass interface for wafer level packaging applications. Manufacturing Technology Today, 19(10), 59–63. Retrieved from https://mtt.cmti.res.in/index.php/journal/article/view/116

Issue

Vol. 19 No. 10 (2020): October 2020

Section

Articles

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All the articles published in Manufacturing Technology Today (MTT) Journal are held by the Publisher. Central Manufacturing Technology Institute (CMTI) as a publisher requires its authors to transfer the copyright prior to publication. This will permit CMTI to reproduce, publish, distribute, and archive the article in print and electronic form and also to defend against any improper use of the article.